specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier product features ? 800 ? 2200 mhz ? +35.7 dbm p1db ? -52 dbc aclr @ ?w p avg ? -47 dbc imd3 @ ?w pep ? 16% efficiency @ ?w p avg ? internal active bias ? internal temp compensation ? capable of handling 7:1 vswr @ 28 vcc, 2.14 ghz, 3w cw pout ? lead-free/rohs-compliant 5x6 mm power dfn package applications ? mobile infrastructure ? final stage amplifier for repeaters product description the AP602 is a high dynamic range power amplifier i n a lead-free/rohs-compliant 5x6mm power dfn smt package. the single stage amplifier has 13 db gain , while being able to achieve high performance for 800-2200 mhz applications with up to +35.7 dbm of compressed 1db power. the AP602 uses a high reliability, high voltage ingap/gaas hbt process technology. the device incorporates proprietary bias circuitry to compensa te for variations in linearity and current draw over tempe rature. the module does not require any negative bias volta ge; an internal active bias allows the AP602 to operate di rectly off a commonly used high voltage supply (typically +24 to +32v). an added feature allows the quiescent bias to be adjusted externally to meet specific system require ments. the AP602 is targeted for use as a pre-driver and d river stage amplifier in wireless infrastructure where hi gh linearity and high efficiency is required. this co mbination makes the device an excellent candidate for next ge neration multi-carrier 3g mobile infrastructure. functional diagram aclr1 vs. output power vs. vcc wcdma, icq = 80 ma, 2140 mhz, 25 ?c -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 average output power (dbm) a c l r 1 (d b c ) 26 v 28 v 30 v 32 v specifications w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw, vcc = +28v, ic q = 80 ma parameter units min typ max operational bandwidth mhz 800 2200 test frequency mhz 2140 output channel power dbm +27 power gain db 13 input return loss db 9 output return loss db 9 aclr dbc -52 imd3 @ +27 dbm pep dbc -47 pin_vpd current, ipd ma 2 operating current, icc ma 112 collector efficiency % 15.7 output p1db dbm +35.7 quiescent current, icq ma 80 vpd, vbias v +5 vcc v +28 absolute maximum rating parameter rating operating case temperature, t c -40 to +85 oc storage temperature, t stg -55 to +125 oc junction temperature, t j 250 oc rf input power (cw tone), p in input p6db breakdown voltage c-b, bv cbo 80 v @ 0.1 ma breakdown voltage c-e, bv cbo 51 v @ 0.1 ma quiescent bias current, i cq 160 ma power dissipation, p diss 4.7 w operation of this device above any of these parameters ma y cause permanent damage. typical performance w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw, vcc = +28v, icq = 80 ma parameter units typical test frequency mhz 940 1960 2140 channel power dbm +27 +27 +27 power gain db 15.5 14.5 13 input return loss db 11 15 9 output return loss db 6.4 7.6 9 aclr dbc -47 -50 -52 imd3 @ +27 dbm pep dbc -62 -51 -47 operating current, icc ma 103 103 112 collector efficiency % 17 17 15.7 output p1db dbm +35.7 +35.5 +35.7 quiescent current, icq ma 80 vpd, vbias v +5 vcc v +28 notes: 1. the reference designs shown in this datasheet have the device optimized for wcdma aclr performance at +25 c. biasing for the amplifier is suggested at vcc = +28v a nd icq = 80 ma to achieve the best tradeoff in terms of efficiency and linea rity. increasing icq will improve upon the device linearity (imd3 and aclr), but will decrease the ef ficiency performance slightly. more information is given in the other parts of this datashee t. 2. the AP602 has been tested for ruggedness to be capable of handling: 7:1 vswr @ +28 vcc, 2140 mhz, 3w cw pout, 5:1 vswr @ +30 vcc, 2140 mhz, 3w cw pout, 3:1 vswr @ +32 vcc, 2140 mhz, 3w cw pout. ordering information part no. description AP602-f high dynamic range 28v 4w hbt amplifier AP602-pcb900 920-960 mhz evaluation board AP602-pcb1960 1930-1990 mhz evaluation board AP602-pcb2140 2110-2170 mhz evaluation board
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier typical device data s-parameters (v cc = +28 v, v pd = v bias = 5 v, i cq = 80 ma, t = 25 c, unmatched 50 ohm system, calibrated to device le ads) 0 0.5 1 1.5 2 2.5 frequency (ghz) gain / maximum stable gain -10 -5 0 5 10 15 20 25 30 35 40 gain (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5. 0 -5.0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0.2 - 0.2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 3ghz swp min 0.01ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 3ghz swp min 0.01ghz the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gai n is shown in the marked red line. the impedance plots are shown from 50 ? 3000 mhz, w ith markers placed at 0.5 ? 3.0 ghz in 0.5 ghz incr ements. freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -5.48 -168.66 24.61 162.66 -43.82 67.14 -0.84 -1 5.48 100 -4.19 -163.72 23.51 148.99 -38.73 56.38 -1.30 - 32.29 200 -2.36 -165.46 21.20 127.42 -35.02 38.63 -3.13 - 55.32 400 -1.26 -173.46 16.82 105.39 -33.36 20.55 -5.71 - 79.41 600 -0.93 -177.48 13.69 94.60 -33.10 12.05 -6.44 -9 1.66 800 -0.75 -179.37 11.52 87.62 -33.19 7.47 -6.28 -99 .86 1000 -0.85 179.64 9.60 80.64 -32.66 16.69 -5.87 -10 4.18 1200 -0.77 178.55 8.33 75.01 -32.18 8.35 -5.44 -108 .62 1400 -0.76 177.13 7.34 69.98 -31.99 4.86 -4.84 -110 .75 1600 -0.85 174.34 6.75 64.38 -31.49 1.88 -4.22 -113 .24 1800 -1.05 169.72 6.43 57.00 -30.96 -2.23 -3.65 -11 6.25 2000 -1.30 162.94 6.31 47.79 -30.28 -8.68 -3.15 -12 0.21 2200 -1.64 154.66 6.25 36.49 -29.50 -16.71 -2.64 -1 25.79 2400 -2.14 146.42 6.13 23.29 -28.80 -28.08 -2.11 -1 33.06 2600 -2.67 140.28 5.83 6.95 -28.30 -42.09 -1.57 -14 2.48 2800 -2.98 139.19 5.31 -11.57 -28.16 -59.43 -1.07 - 154.01 3000 -2.77 142.63 4.53 -33.00 -28.51 -80.88 -0.83 - 165.99 device s-parameters are available for download off of the website at: http://www.wj.com
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier application circuit pc board layout pcb material: 0.0147? rogers ultralam 2000, single layer, 1 oz cu, r = 2.45, microstrip line details: width = .042?, s pacing = .050? baseplate configuration notes: 1. please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environmen ts to dissipate the power consumed by the device. the use of a convection fan is also recommen ded in laboratory environments. 2. the area around the module underneath the pcb should not c ontain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power- on sequencing is recommended. evaluation board bias procedure following bias procedure is recommended to ensure p roper functionality of AP602 in a laboratory enviro nment. the sequencing is not required in the final system application. bias. voltage (v) vcc +28 vbias +5 vpd +5 turn-on sequence: 1. attach input and output loads onto the evaluation b oard. 2. turn on power supply vcc = +28v. 3. turn on power supply vbias = +5v. at this point, t he only current drawn by the device is leakage curr ent (< 25ma). 4. turn on power supply vpd = +5v. power supply vcc s hould now be drawing typical icq = 40 ma. 5. turn on rf power. turn-off sequence: 1. turn off rf power. 2. turn off power supply vpd = +5v. 3. turn off power supply vbias = +5v. 4. turn off power supply vcc = +28v. notes: 1. vpd is used as a reference for the internal active bias circuitry. it can be used to turn on/off the a mplifier. 2. icq can be adjusted with the resistor r2 from the v pd (+5v) supply and the pin_vpd (pin14) of the ampl ifier. increasing r2 results in a lower icq. icq should not be increased above 160 ma. 3. vbias should be maintained fixed at +5v. ibias will change based on rf input power level.
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier 920-960 application circuit (AP602-pcb900) typical wcdma performance at 25 c at a channel power of +27 dbm frequency 940 mhz w-cdma channel power +27 dbm power gain 15.5 db input return loss 11 db output return loss 6.4 db aclr -47 dbc imd3 @ +27 dbm pep -50 dbc operating current, icc 103 ma collector efficiency 17 % output p1db +35.7 dbm quiescent current, icq 80 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the s chematic are not used. 3. c20 is not required in the final design if there is no dc signal present at the output of the amplifier circuit. 4. the center of c24 is placed at 0.305? (11.97 @ 900mhz) from the edge of the AP602 (u1). 5. the center of c19 is placed at 0.745? (29.25 @ 900 mhz) from the edge of the AP602 (u1). 6. the bold-faced rf trace is for the dc bias feed. th e stub?s length is approximately a ? . 7. the main rf trace is cut at component l3 and l4 for this particular reference design. 920-960 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 80 ma, 25 ?c 12 13 14 15 16 17 26 28 30 32 34 36 output power (dbm) gain (db) 920 mhz 940 mhz 960 mhz s11, s22 vs. frequency vcc = 28v, icq = 80 ma, 25 ?c -25 -20 -15 -10 -5 0 0.8 0.85 0.9 0.95 1 1.05 1.1 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 80 ma, 25 ?c 0 10 20 30 40 50 18 22 26 30 34 output power (dbm) collector efficiency (%) 920 mhz 940 mhz 960 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 80 ma, 25 ?c -65 -60 -55 -50 -45 -40 18 20 22 24 26 28 average output power (dbm) aclr1 (dbc) 920 mhz 940 mhz 960 mhz imd vs. output power cw 2-tone signal, 940 mhz, f = 1 mhz, 28v, 80 ma icq, 25 ?c -80 -70 -60 -50 -40 22 24 26 28 30 32 output power, pep (dbm) imd (dbc) imd3l imd3u imd5 efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 80 ma, 25 ?c 0 5 10 15 20 25 18 20 22 24 26 28 average output power (dbm) collector efficiency (%) 920 mhz 940 mhz 960 mhz v bias v pd gnd v cc see note 4 see note 5 2 ohm
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier 1930-1990 mhz application circuit (AP602-pcb1960) typical wcdma performance at 25 c at a channel power of +27 dbm frequency 1960 mhz w-cdma channel power +27 dbm power gain 14.5 db input return loss 15 db output return loss 7.6 db aclr -50 dbc imd3 @ +27 dbm pep -51 dbc operating current, icc 103 ma collector efficiency 17 % output p1db +35.5 dbm quiescent current, icq 80 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the s chematic are not used. 3. c1 is not required in the final design. 4. the center of c3 is placed at 0.035? (2.99 @ 1960 mhz) from the edge of the AP602 (u1). 5. the center of component l3 is placed at 0.170? (14. 52 @ 1960 mhz) from the center c3. 6. the center of c25 is placed at 0.570? (48.70 @ 1960 mhz) from the edge of the AP602 (u1). 7. the bold-faced rf trace is for the dc bias feed. th e stub?s length is approximately a ? . 8. the main rf trace is cut at component location l3 f or this particular reference design. 1930-1990 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 80 ma, 25 ?c 11 12 13 14 15 16 26 28 30 32 34 36 output power (dbm) gain (db) 1930 mhz 1960 mhz 1990 mhz s11, s22 vs. frequency vcc = 28v, icq = 80 ma, 25 ?c -25 -20 -15 -10 -5 0 1.8 1.85 1.9 1.95 2 2.05 2.1 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 80 ma, 25 ?c 0 10 20 30 40 50 60 16 20 24 28 32 36 output power (dbm) collector efficiency (%) 1930 mhz 1960 mhz 1990 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 80 ma, 25 ?c -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 average output power (dbm) aclr1 (dbc) 1930 mhz 1960 mhz 1990 mhz imd vs. output power cw 2-tone signal, 1960 mhz, f = 1 mhz, 28v, 80 ma icq, 25 ?c -80 -70 -60 -50 -40 22 24 26 28 30 32 output power, pep (dbm) imd (dbc) imd3l imd3u imd5 efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 80 ma, 25 ?c 0 5 10 15 20 25 19 21 23 25 27 29 average output power (dbm) collector efficiency (%) 1930 mhz 1960 mhz 1990 mhz see note 6 see note 4 v bias v p d gnd v cc 4.7 nh see note 5 l3
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 6 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier 2010-2025 mhz application circuit typical performance at 25 c at an output power of +27 dbm frequency 2015 mhz total output power +27 dbm power gain 13.7 db input return loss 12 db output return loss 8.5 db imd3 @ +27 dbm pep -44 dbc operating current, icc 110 ma collector efficiency 16.5 % output p1db +36 dbm quiescent current, icq 80 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the s chematic are not used. 3. the center of c22 is placed at 0.185? (16.25 @ 2015 mhz) from the center of c1. 4. the center of c1 is placed at 0.885? (77.74 @ 2015 mhz) from the center of c5. 5. the center of c5 is placed at 0.085? (7.46 @ 2015 mhz) from the edge of the AP602 (u1). 6. the center of c6 is placed at 0.510? (44.80 @ 2015 mhz) from the edge of the AP602 (u1). 7. the center of c20 is placed at 0.450? (39.53 @ 2015 mhz) from the center of c6. 8. the bold-faced rf trace is for the dc bias feed. th e stub?s length is approximately a ? . 2010-2025 mhz application circuit performance plots gain vs. output power vs. temperature cw tone, vcc = 28v, icq = 80 ma, 2025 mhz 10 11 12 13 14 15 28 30 32 34 36 38 output power (dbm) gain (db) -40 ?c 25 ?c 85 ?c s11, s22 vs. frequency vcc = 28v, icq = 80 ma, 25 ?c -25 -20 -15 -10 -5 0 1.96 1.98 2 2.02 2.04 2.06 2.08 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. temperature cw tone, vcc = 28v, icq = 80 ma, 2025 mhz 0 10 20 30 40 50 20 24 28 32 36 output power (dbm) collector efficiency (%) -40 ?c 25 ?c 85 ?c aclr1 vs. output power vs. temperature wcdma, vcc = 28v, icq = 80 ma, 2025 mhz -60 -55 -50 -45 -40 -35 19 21 23 25 27 29 average output power (dbm) aclr1 (dbc) -40 ?c 25 ?c 85 ?c wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db imd vs. output power cw 2-tone signal, 2015 mhz, f = 1 mhz, 28v, 80 ma icq, 25 ?c -80 -70 -60 -50 -40 22 24 26 28 30 32 output power, pep (dbm) imd (dbc) imd3l imd3u imd5 efficiency vs. output power vs. temperature wcdma, vcc = 28v, icq = 80 ma, 2025 mhz 0 5 10 15 20 25 19 21 23 25 27 29 average output power (dbm) collector efficiency (%) -40 ?c 25 ?c 85 ?c wcdma 3gpp tm 1+64dpch, 60% clipping, par = 8.6 db c22 1.2 pf see note 3 2.4pf see note 6 4.7 pf see note 4 v bias v pd gnd v cc c5 3.3pf see note 5
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 7 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier 2110-2170 mhz application circuit (AP602-pcb2140) typical wcdma performance at 25 c at a channel power of +27 dbm frequency 2140 mhz w-cdma channel power +27 dbm power gain 13 db input return loss 9 db output return loss 9 db aclr -52 dbc imd3 @ +27 dbm pep -47 dbc operating current, icc 112 ma collector efficiency 15.7 % output p1db +35.7 dbm quiescent current, icq 80 ma vpd, vbias +5 v vcc +28 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on th e schematic are not used. 3. the center of c3 is placed at 0.035? (3.26 @ 2140 mhz) from the edge of the AP602 (u1). 4. the center of c1 is at 0.910? (84.89 @ 2140 mhz) from the center of c3. 5. the center of c22 is placed at 0.185? (17.25 @ 2140 mhz) from the center of c1. 6. the center of c6 is placed at 0.510? (47.57 @ 2140 mhz) from the edge of the AP602 (u1). 7. the bold-faced rf trace is for the dc bias feed. the stub?s length is approximately a ? . 2110-2170 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. frequency cw tone, vcc = 28v, icq = 80 ma, 25 ?c 11 12 13 14 20 24 28 32 36 output power (dbm) gain (db) 2110 mhz 2140 mhz 2170 mhz s11, s22 vs. frequency vcc = 28v, icq = 80 ma, 25 ?c -25 -20 -15 -10 -5 0 2 2.05 2.1 2.15 2.2 2.25 2.3 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs. output power vs. frequency cw tone, vcc = 28v, icq = 80 ma, 25 ?c 0 10 20 30 40 50 20 24 28 32 36 output power (dbm) collector efficiency (%) 2110 mhz 2140 mhz 2170 mhz aclr1 vs. output power vs. frequency wcdma, vcc = 28v, icq = 80 ma, 25 ?c -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 average output power (dbm) aclr1 (dbc) 2110 mhz 2140 mhz 2170 mhz icc vs. output power vs. frequency wcdma, vcc = 28v, icq = 80 ma, 25 ?c 80 90 100 110 120 130 140 19 21 23 25 27 29 average output power (dbm) collector current (ma) 2110 mhz 2140 mhz 2170 mhz efficiency vs. output power vs. frequency wcdma, vcc = 28v, icq = 80 ma, 25 ?c 0 5 10 15 20 25 19 21 23 25 27 29 average output power (dbm) collector efficiency (%) 2110 mhz 2140 mhz 2170 mhz see note 6 c22 0.5 pf see note 5 see note 4 see note 3 v bias v pd gnd v cc
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 8 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier 2110-2170 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, 60% clipping, par = 8.6 db @ 0.01% probability, 3.84 mhz bw gain vs. output power vs. temperature cw tone, vcc = 28v, icq = 80 ma, 2140 mhz 10 11 12 13 14 15 20 24 28 32 36 output power (dbm) gain (db) -40 ?c 25 ?c 85 ?c icc vs. output power vs. temperature cw tone, vcc = 28v, icq = 80 ma, 2140 mhz 50 100 150 200 250 300 20 24 28 32 36 output power (dbm) collector current (ma) -40 ?c 25 ?c 85 ?c efficiency vs. output power vs. temperature cw tone, vcc = 28v, icq = 80 ma, 2140 mhz 0 10 20 30 40 50 60 20 24 28 32 36 output power (dbm) collector efficiency (%) -40 ?c 25 ?c 85 ?c aclr1 vs. output power vs. temperature wcdma, vcc = 28v, icq = 80 ma, 2140 mhz -60 -55 -50 -45 -40 -35 19 21 23 25 27 29 average output power (dbm) aclr1 (dbc) -40 ?c 25 ?c 85 ?c icc vs. output power vs. temperature wcdma, vcc = 28v, icq = 80 ma, 2140 mhz 70 80 90 100 110 120 130 19 21 23 25 27 29 average output power (dbm) collector current (ma) -40 ?c 25 ?c 85 ?c efficiency vs. output power vs. temperature wcdma, vcc = 28v, icq = 80 ma, 2140 mhz 0 5 10 15 20 25 19 21 23 25 27 29 average output power (dbm) collector efficiency (%) -40 ?c 25 ?c 85 ?c gain vs. frequency vs. temperature wcdma, vcc = 28v, icq = 80 ma, +27 dbm pout 9 10 11 12 13 14 2110 2130 2150 2170 frequency (mhz) gain (db) -40 ?c 25 ?c 85 ?c aclr1 vs. output power vs. vcc wcdma, icq = 80 ma, 2140 mhz, 25 ?c -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 average output power (dbm) aclr1 (dbc) 26 v 28 v 30 v 32 v efficiency vs. output power vs. vcc wcdma, icq = 80 ma, 2140 mhz, 25 ?c 0 5 10 15 20 25 19 21 23 25 27 29 average output power (dbm) collector efficiency (%) 26 v 28 v 30 v 32 v gain vs. output power vs. vcc cw tone, icq = 80 ma, 2140 mhz, 25 ?c 11 12 13 14 20 24 28 32 36 output power (dbm) gain (db) 26 v 28 v 30 v 32 v efficiency vs. output power vs. vcc cw tone, icq = 80 ma, 2140 mhz, 25 ?c 0 10 20 30 40 50 60 20 24 28 32 36 output power (dbm) collector efficiency (%) 26 v 28 v 30 v 32 v oip3 vs. output power vs. vcc cw 2-tone signal, 2140 mhz, f = 1 mhz, icq = 80 ma, 25 ?c 30 35 40 45 50 55 24 26 28 30 32 34 output power, pep (dbm) oip3 (dbm) 26 v 28 v 30 v 32 v imd3 vs. output power vs. vcc cw 2-tone signal, 2140 mhz, f = 1 mhz, icq = 80 ma, 25 ?c -65 -60 -55 -50 -45 -40 24 26 28 30 32 34 output power, pep (dbm) imd3 (dbc) 26 v 28 v 30 v 32 v imd5 vs. output power vs. vcc cw 2-tone signal, 2140 mhz, f = 1 mhz, icq = 80 ma, 25 ?c -70 -65 -60 -55 -50 -45 24 26 28 30 32 34 output power, pep (dbm) imd5 (dbc) 26 v 28 v 30 v 32 v
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 9 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier 2110-2170 mhz application note: changing icq biasi ng configurations the AP602 can be configured to be operated with low er bias current by varying the bias-adjust resistor ? r2. the recommended circuit configurations shown previously in this datasheet have the device operating with a 80 ma as the quiescent current (i cq ). this biasing level represents the best tradeoff in terms of linearity and efficiency. lowering i cq will improve upon the efficiency of the device, but degr aded linearity. increasing i cq has nominal improvement upon the linearity, but will degrade the device?s efficiency. measured data shown in the plots below represents the AP602 measured and configured for 2.14 ghz applications. it is expect ed that variation of the bias current for other fre quency applications will produce similar performance results. icq (ma) r2 (ohms) vpd voltage (v) pin_vpd voltage (v) 20 6.00k 5 2.53 40 2.76k 5 2.61 60 1.80k 5 2.67 80 1.33k 5 2.73 120 1.05k 5 2.79 140 859 5 2.84 160 723 5 2.89 aclr1 vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ?c -65 -60 -55 -50 -45 -40 -35 19 21 23 25 27 29 average output power (dbm) aclr1 (dbc) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma icc vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ?c 0 50 100 150 200 19 21 23 25 27 29 average output power (dbm) collector current (ma) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma efficiency vs. output power vs. icq wcdma, vcc = 28v, 2140 mhz, 25 ?c 0 5 10 15 20 25 30 19 21 23 25 27 29 average output power (dbm) collector efficiency (%) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma gain vs. output power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ?c 11 12 13 14 15 16 20 24 28 32 36 output power (dbm) gain (db) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma output power vs. input power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ?c 20 24 28 32 36 8 12 16 20 24 input power (dbm) output power (dbm) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma efficiency vs. output power vs. icq cw tone, vcc = 28v, 2140 mhz, 25 ?c 0 10 20 30 40 50 20 24 28 32 36 output power (dbm) collector efficiency (%) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma oip3 vs. output power vs. icq cw 2-tone signal, 2140 mhz, f = 1 mhz, vcc = 28v, 25 ?c 30 35 40 45 50 55 24 26 28 30 32 34 output power, pep (dbm) oip3 (dbm) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma imd3 vs. output power vs. icq cw 2-tone signal, 2140 mhz, f = 1 mhz, vcc = 28v, 25 ?c -80 -70 -60 -50 -40 -30 24 26 28 30 32 34 output power, pep (dbm) imd3 (dbc) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma imd5 vs. output power vs. icq cw 2-tone signal, 2140 mhz, f = 1 mhz, vcc = 28v, 25 ?c -80 -70 -60 -50 -40 -30 24 26 28 30 32 34 output power, pep (dbm) imd5 (dbc) 20 ma 40 ma 60 ma 80 ma 100 ma 120 ma 140 ma 160 ma v bias v pd gnd v cc
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 10 of 10 november 2006 AP602 high dynamic range 4w 28v hbt amplifier AP602-f mechanical information this package is lead-free and rohs-compliant. it is compatible with both lead-fr ee (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the pla ting material on the pins is annealed matte tin ove r copper. outline drawing mounting configuration / land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance, rth 16.6 c / w junction temperature, t j for 10 6 hours mttf 170 oc product marking the component will be laser marked with an ?AP602-f? product label with an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. functional pin layout pin function 1 pin_vbias 2, 3, 7, 8, 12, 13 n/c or gnd 4, 5, 6 rf in 9, 10, 11 rf output / vcc 14 pin_vpd backside paddle gnd msl / esd rating esd rating: tbd value: tbd test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: tbd standard: jedec standard j-std-020
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